PART |
Description |
Maker |
ESD5305F ESD5305F-6/TR |
4-Lines, Uni-directional, Low Capacitance Transient Voltage Suppressors
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Will Semiconductor Ltd.
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ESDA6V8UDA |
4-Lines, Uni-directional, Ultra-low Capacitance, Transient Voltage Suppressors
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TY Semiconductor Co., Ltd
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6N140A-100 HCPL-6730 HCPL-177K-B600 HCPL-5731 HCPL |
5962-9800201KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-573K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-5731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981001XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 6N140A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 6N140A/883B · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401ZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401FC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401EA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978504K2A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978503KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-89785022A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501ZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-6750 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-5730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-5700 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-570K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-6731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-673K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-6751 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-177K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-6730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-5701 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-675K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-177K-300 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-177K-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-177K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8978501PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-570K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 6N140A-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-8981002KXA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KFC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KEC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers 5962-9800201KEA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers HCPL-573K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers (HCPL-xxxx) Hermetically Sealed / Low IF / Wide VCC / High Gain Optocouplers 3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits 3.5MM M-M STREO AUDIO 30CBLE; 24AWG, BLCK MOLDED 3.5MM M-M STREO AUDIO 25CBLE; 24AWG, BLCK MOLDED LOGIC-GATE-OUTPUT OPTOCOUPLER 逻辑门输出光耦合 Hermetically Sealed. Low IF. Wide Vcc. High Gain Optocouplers 密封。低中频。宽的VCC。高增益光电耦合 Hermetically Sealed, Low I F ,Wide V CC , High Gain Optocouplers(密封,小电流,宽电压,高增益光耦合 密封,低中频,宽V CC的,高增益光耦合器(密封,小电流,宽电压,高增益光耦合器) NPN-OUTPUT DC-INPUT OPTOCOUPLER npn型输出DC -输入光耦合 DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER 达林 npn型输出DC -输入光耦合 Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers 密封,中频,宽虚拟通道连接,高增益低光 3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits 密封。低中频。宽的VCC。高增益光电耦合 Receptacle With A Standard Tail 达林 npn型输出DC -输入光耦合 1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps 4 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
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Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Agilent Technologies, Inc. Avago Technologies, Ltd. Analog Devices, Inc. BI Technologies, Corp. Coilcraft, Inc. Harwin PLC AGILENT TECHNOLOGIES INC
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ESD5302F |
Transient Voltage Suppressors 2-Lines, Uni-directional, Ultra-low Capacitance Transient Voltage Suppressors
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TY Semicondutor TY Semiconductor Co., L...
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IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128K x 8 Ultra Low Power and Low VCC SRAM From old datasheet system 55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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Renesas Electronics Corporation. Renesas Electronics, Corp.
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KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
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Samsung Electronic
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15KPA200 15KPA240A 15KPA24C 15KPA22A 15KPA26 15KPA |
Diode TVS Single Uni-Dir 200V 15KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 240V 15KW 2-Pin Case P600 Tape and Ammo Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 22V 15KW 2-Pin Case P600 Tape and Ammo Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 28V 15KW 2-Pin Case P600 T/R Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 Tape and Ammo Diode TVS Single Bi-Dir 18V 15KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 Tape and Ammo Diode TVS Single Uni-Dir 18V 15KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 T/R Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600 Tape and Ammo
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New Jersey Semiconductor
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3SMC6.5A 3SMC7.0A 3SMC9.0A |
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.5V,单向玻璃钝化节点瞬变电压抑制 Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,单向玻璃钝化节点瞬变电压抑制 Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,单向玻璃钝化节点瞬变电压抑制 Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(??ぇ???宸ヤ??靛?.0V,????荤???????????靛??????
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Central Semiconductor Corp.
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1SMC8.0A 1SMC8.5A 1SMC60A 1SMC6.5A 1SMC16A 1SMC7.0 |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 5.0 THRU 170 VOLTS 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.0V,单向玻璃钝化节点瞬变电压抑制 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,单向玻璃钝化节点瞬变电压抑制 PTSA 1.5/10-3.5-Z UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS/ 5.0 THRU 170 VOLTS
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Central Semiconductor, Corp. Central Semiconductor Corp.
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28F002BV-T E28F002BV-B80 |
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5)
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Intel
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